Osamah Kharsah

Contact
Experimental Physics
Center for Nanointegration Duisburg-Essen (CENIDE)
Lotharstraße 1, 47057 Duisburg (MC 372)
Educational Background
- M.Sc. in NanoEngineering with a specialization in (nano)-optoelectronics at the University of Duisburg-Essen
- B.Sc. in NanoEngineering at the University of Duisburg-Essen
Publications
Daniel, L., Sutarma, D., Kharsah, O., Lintz, C., Myja, H., Kratzer, P. and Schleberger, M., 2025. Mechanism of Oleic Acid-Mediated Sulfur Vacancy Healing in Monolayer WS2, ACS Nanoscience Au, 5, 576-584. https://doi.org/10.1021/acsnanoscienceau.5c00091
Durante, O., De Stefano, S., Mazzotti, A., Viscardi, L., Giubileo, F., Kharsah, O., Daniel, L., Sleziona, S., Schleberger, M. and Di Bartolomeo, A., 2025. Pressure-dependent current transport in vertical BP/MoS2 heterostructures, Heliyon, 11(3), e42443. https://doi.org/10.1016/j.heliyon.2025.e42443
Durgamahanti, P., Kharsah, O., Zhang, J., Ullah, F., Vidish, D., Jarrahi Zadeh, Y., Maas, A., Smith, R.D., Lorke, A. and Schleberger, M., 2025. Rapid nucleation of ZnO on MoS2 and WS2 using an atmospheric-pressure spatial atomic layer deposition system, 2D Materials, in press. https://doi.org/10.1088/2053-1583/adda02
Giubileo, F., Pelella, A., Grillo, A., Faella, E., Sleziona, S., Kharsah, O., Schleberger, M. and Di Bartolomeo, A., 2022. Characterization of the electric transport properties of black phosphorous back-gated field-effect transistors, Journal of Physics: Conference Series, 2353, 012005. http://dx.doi.org/10.1088/1742-6596/2353/1/012005
Grillo, A., Pelella, A., Faella, E., Giubileo, F., Sleziona, S., Kharsah, O., Schleberger, M. and Di Bartolomeo, A., 2022. Memory effects in black phosphorus field effect transistors, 2D Materials, 9, 150028. https://doi.org/10.1088/2053-1583/ac3f45
Kumar, A., Intonti, K., Viscardi, L., Durante, O., Pelella, A., Kharsah, O., Sleziona, S., Giubileo, F., Martucciello, N., Ciambelli, P., Schleberger, M. and Di Bartolomeo, A., 2024. Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors, Materials Horizons. https://doi.org/10.1039/d4mh00027g
Kumar, A., Viscardi, L., Faella, E., Giubileo, F., Intonti, K., Pelella, A., Sleziona, S., Kharsah, O., Schleberger, M. and Di Bartolomeo, A., 2023. Black phosphorus unipolar transistor, memory, and photodetector, Journal of Materials Science, 58, 2689-2699. http://dx.doi.org/10.1007/s10853-023-08169-0
Kumar, A., Viscardi, L., Faella, E., Giubileo, F., Intonti, K., Pelella, A., Sleziona, S., Kharsah, O., Schleberger, M. and Di Bartolomeo, A., 2023. Temperature dependent black phosphorus transistor and memory, Nano Ex., 4, 014001. https://doi.org/10.1088/2632-959X/acbe11
Mazzotti, A., Durante, O., De Stefano, S., Viscardi, L., Pelella, A., Kharsah, O., Daniel, L., Sleziona, S., Schleberger, M. and Di Bartolomeo A., 2025. BP/MoS2 Van Der Waals Heterojunctions for Self-Powered Photoconduction, Advanced Optical Materials, 2500811. https://doi.org/10.1002/adom.202500811
Pelella, A., Kharsah, O., Grillo, A., Urban, F., Passacantando, M., Giubileo, F., Iemmo, L., Sleziona, S., Pollmann, E., Madauß, L., Schleberger, M. and Di Bartolomeo, A., 2020. Electron Irradiation of Metal Contacts in Monolayer MoS2 Field-Effect Transistors, ACS Applied Materials & Interfaces, 12(36), 40532-40540. http://dx.doi.org/10.1021/acsami.0c11933
Schmeink, J., Osterfeld, J., Kharsah, O. et al., 2024. Unraveling the influence of defects in Janus MoSSe and Janus alloys MoS2(1−x)Se2x, npj 2D Mater Appl 8, 67 (2024). https://doi.org/10.1038/s41699-024-00504-6
Sleziona, S., Kharsah, O., Skopinski, L., Daniel, L., Schmeink, J. and Schleberger, M. (2024). Influence of Highly Charged Ion Irradiation on the Electrical and
Memory Properties of Black Phosphorus Field-Effect Transistors, Advanced Electronic Materials. https://doi.org/10.1002/aelm.202400318
Sleziona, S., Pelella, A., Faella, E., Kharsah, O., Skopinski, L., Maas, A., Liebsch, Y., Schmeink, J., di Bartolomeo, A. and Schleberger, M., 2023. Manipulation of the electrical and memory properties of MoS2 field-effect transistors by highly charged ion irradiation, Nanoscale Advances, 5, 6958-6966. https://doi.org/10.1039/D3NA00543G
Viscardi, L., Durante, O., De Stefano, S., Intonti, K., Kumar, A., Pelella, A., Giubileo, F., Kharsah, O., Daniel, L., Sleziona, S., Schleberger, M. and Di Bartolomeo, A., 2024. Dominant n-type conduction and fast photoresponse in BP/MoS2 heterostructures, Surfaces and Interfaces, 49, 104445. https://doi.org/10.1016/j.surfin.2024.104445
Viscardi, L., Intonti, K., Kumar, A., Faella, E., Pelella, A., Giubileo, F., Sleziona, S., Kharsah, O., Schleberger, M. and Di Bartolomeo, A., 2023. Black Phosphorus Nanosheets in Field Effect Transistors with Ni and NiCr Contacts, Physica Status Solidi B, 260, 2200537. http://dx.doi.org/10.1002/pssb.202200537


