Tobiloba Fabunmi

Contact

University of Duisburg-Essen, Faculty of Engineering
Electronic Materials and Nanostructures
Center for Nanointegration Duisburg-Essen (CENIDE)
Bismarckstr. 81, 47057 Duisburg (BA 118)

Educational Background

  • MSc. in Physics, Seoul National University, South Korea
  • BSc. in Physics, Obafemi Awolowo Univeristy, Nigeria

Publications

Zhang, R., Daniel, L., Sutarma, D., Viernes, C., Ding, Y., Fabunmi, T., Bacher, G., Heuken, M., Vescan, A., Kratzer, P., Schleberger, M. and Sciaini, G., 2026. Defect-engineered competition between exciton annihilation and trapping in MOCVD WS, Chemical Science, 17. https://doi.org/10.1039/D5SC07343J

Abdelbaky, M., Beckmann, Y., Klein, J., Fabunmi, T.G., Stracke, N., Grundmann, A., Heuken, M., Kalisch, H., Vescan, A., Kümmell, T., Mertin, W. and Bacher, G., 2025. Band structure alignment in transfer-free MOCVD grown 2D-TMDC heterostructures revealed by ambient KPFM, APL Materials, 13, 041112. https://doi.org/10.1063/5.0248519

Fabunmi, T.G., Lee, S., Kim, H.I., Yoo, D., Lee, J., Kim, I., Ali, A., Jang, D., Lee, S., Lee, C., Kim, M. and Yi, G-C., 2023. Single-crystalline GaN microdisk arrays grown on graphene for flexible micro-LED application, Nanotechnology, 35(8). https://doi.org/10.1088/1361-6528/ad0e92

Lee, S., Abbas, M.S., Yoo, D., Lee, K., Fabunmi, T.G., Lee, E., Kim, H.I., Kim, I., Jang, D., Lee, S., Lee, J., Park, K.-T., Lee, C., Kim, M., Lee, Y.S., Chang, C.C. and Yi, G.-C., 2023. Pulsed-Mode Metalorganic Vapor-Phase Epitaxy of GaN on Graphene-Coated c-Sapphire for Freestanding GaN Thin Films, Nano Letters, 23(24), 11578-11585. https://doi.org/10.1021/acs.nanolett.3c03333

Olofinjana, B., Fabunmi, T.G., Efe, F.O., Fasakin, O., Adebisi, A.C., Eleruja, M.A., Akinwunmi, O.O. and Ajayi, E.O.B, 2023. Deposition of stoichiometry–tailored amorphous Cu-S thin films by MOCVD technique, Phase Transitions, 6(5), 361-373. https://doi.org/10.1080/01411594.2023.2189113

Olofinjana, B., Fasakin, O., Adebisi, C.A., Eleruja, M.A. and Fabunmi, T.G., 2023. Opto-electronic properties of copper-zinc-sulfide thin films grown via metalorganic-chemical vapor deposition technique at different flow rates FO Efe, Physica Scripta, 98(8), 085914. https://doi.org/10.1088/1402-4896/ace2f8